- low power loss, high current capability, low vf - surface device type mounting - moisture sensitivity level 1 - matte tin (sn) lead finish with nickel (ni) under plate - pb free version and rohs compliant - packing code with suffix "g" means green compound (halogen-free) - case: sot- 23, molded plastic - terminal: matte tin plated, lead free, solderable per mil-std-202, method 208 guaranteed - high temperature soldering guaranteed: 260c/10s - weight: 8 mg (approximately) - marking code: jv symbol unit p d mw v rrm v i o ma i fsm ma r ja c/w t j , t stg c symbol unit v br v c j pf t rr ns notes : 1. valid provided that electrodes are kept at ambient temperature document number: ds_s1412037 version: d15 thermal resistance (junction to ambient) (note 1) non-repetitive peak forward surge current @ t = 1.0 s mean forward current repetitive peak reverse voltage power dissipation -55 to +150 330 500 200 75 - 2. reverse recovery test conditions : i f =10ma , i r =10ma , r l =100 ? , i rr = 1ma 3.0 reverse recovery time (note 2) -2.0 v 75 min junction and storage temperature range parameter max - reverse breakdown voltage i r = 100 a 225 - -1.0 0.9 v f - -1.25 1.1 junction capacitance forward voltage i f = 150 ma i f = 50 ma i f = 10 ma i f = 1 ma v r = 0 v , f = 1.0 mhz reverse leakage current parameter value sot-23 mechanical data maximum ratings and electrical characteristics (t a =25c unless otherwise noted) bas116 taiwan semiconductor small signal product 225mw, smd switching diode features na v r = 75 v t j =25c t j =150c i r - 80 5
small signal product (t a =25c unless otherwise noted) document number: ds_s1412037 version: d15 ratings and characteristics curves bas116 taiwan semiconductor 1 10 100 1000 10000 0 20406080100120 reverse current ( a) reverse voltage (v) fig. 2 reverse current vs. reverse voltage 0 50 100 150 200 250 0 25 50 75 100 125 150 175 power dissipation (mw) ambient temperature ( o c) fig. 3 fig. 3 admissible power dissipation curve 0 0.4 0.8 1.2 1.6 2 048121620 junction capacitance (pf) reverse voltage (v) fig. 4 typical junction capacitance 0.01 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 instantaneous forward current (ma) instantaneous forward voltage (v) fig. 1 typical forward characteristics
ordering information part no. bas116 part no. bas116 package outline dimensions min max min max a 2.70 3.10 0.106 0.122 b 1.10 1.50 0.043 0.059 c 0.30 0.51 0.012 0.020 d 1.78 2.04 0.070 0.080 e 2.10 2.64 0.083 0.104 f 0.89 1.30 0.035 0.051 g h suggested pad layout z x y c e document number: ds_s1412037 version: d15 bas116 rfg g green compound rf example preferred p/n packing code suffix description packing code packing g sot-23 3k / 7" reel packing code rf 0.9 0.035 1.9 0.075 1.0 0.039 unit (inch) typ. typ. 2.8 0.110 0.7 0.028 dim. unit (mm) unit (inch) 0.55 ref 0.022 ref 0.10 ref 0.004 ref dim. unit (mm) sot-23 bas116 taiwan semiconductor small signal product packing code suffix package
small signal product assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_s1412037 version: d15 bas116 taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf,
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